Article

Diffusion of yittrium in silicon

D. É. NazyrovUlugbek National University of Uzbekistan, Tashkent, 700174, UzbekistanMuratali BazarbaevUlugbek National University of Uzbekistan, Tashkent, 700174, UzbekistanA. A. IminovUlugbek National University of Uzbekistan, Tashkent, 700174, Uzbekistan

Semiconductorsjournal2006en

ABI

Abstract

The diffusion of yttrium in silicon is studied for the first time. The diffusion is performed in air or vacuum in the temperature range of 1100–1250°C. The temperature dependence of the diffusivity of yttrium in silicon is described by the relation D = 8 × 10−3 exp(−2.9 eV/kT) cm2 s−1. The acceptor nature of yttrium in silicon is revealed.

Topics

Silicon and Solar Cell Technologies Semiconductor materials and interfaces Intermetallics and Advanced Alloy Properties

Identifiers

DOI: 10.1134/s1063782606070049

Citations and references

Cited by 03 references

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