Article

Diffusion of terbium in silicon

D. É. NazyrovUlugbek National University of Uzbekistan, Tashkent, 700174, Uzbekistan

Semiconductorsjournal2006en

ABI

Abstract

The diffusion of terbium in silicon in the temperature range of 1100–1250°C is studied using the direct radioisotope technique for the first time. The diffusion parameters of terbium in silicon are determined.

Topics

Graphite, nuclear technology, radiation studies Silicon and Solar Cell Technologies Semiconductor materials and interfaces

Identifiers

DOI: 10.1134/s1063782606060029

Citations and references

Cited by 01 references

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