The Semi-Conductor Optical Switch on a Base of Field Transistor
Kh. K. AripovTashkent University of information technologies, UzbekistanD. M. YodgorovaPhysical-Technical Institute of the Scientific Association, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanАртур КаримовPhysical-Technical Institute of the Scientific Association, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanSh.sh. YuldashevPhysical-Technical Institute of the Scientific Association, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanB.Z. NurmukhamedovPhysical-Technical Institute of the Scientific Association, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
2006en
ABI
Abstract
In the present work the results of research of some opportunities of the field phototransistor as optical switch are resulted. The field phototransistor, used for this purpose, represents arsenide gallium structure of flat design with the bottom manager p-n-junction in quality gate. The mode of operations of the device with switching from one status in another requires a choice working load straight line so that it crossed the target characteristic of the field phototransistor constructed on measurements of the voltage-current characteristics at two various illuminations at least, in two points appropriate to steady statuses.
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