D. M. Yodgorova

44 works

Physical-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

1. Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region

   R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +6

   ArticleAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20236 citations

   ABIABI:AkademIndex/openalex/2023.article.001003

2. Dependence of the accuracy of the silicon diode temperature sensors for cryogenic thermometry on the spread of their parameters

   R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5

   ArticleCalibration and Measurement TechniquesLow Temperature Physics20234 citations

   ABIABI:AkademIndex/openalex/2026.other.437743

3. Some features of photocurrent generation in single- and multibarrier photodiode structures

   A. V. Karimov, D. M. Yodgorova

   ArticleAdvanced Semiconductor Detectors and MaterialsSemiconductors20103 citations

   ABIABI:AkademIndex/openalex/2010.article.000151

4. A compensation method for measuring the junction temperature of a p +-p-n + silicon structure

   O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +3

   ArticleSemiconductor materials and interfacesInstruments and Experimental Techniques20133 citations

   ABIABI:AkademIndex/openalex/2013.article.000163

5. Features of the performance of a transient voltage suppressor in the pulsed mode

   A. Z. Rahmatov, O. A. Abdulkhaev, A. V. Karimov +1

   ArticlePulsed Power Technology ApplicationsSemiconductors20133 citations

   ABIABI:AkademIndex/openalex/2013.article.000241

6. Features of the temperature properties of a field-effect transistor in a current-limiting mode

   O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2

   ArticleSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20133 citations

   ABIABI:AkademIndex/openalex/2026.other.568790

7. Influence of neutron radiation on breakdown voltage of silicon voltage limiter

   A. Z. Rakhmatov, Д. А. Петров, A. V. Karimov +2

   ArticleEngineering Diagnostics and ReliabilityRadioelectronics and Communications Systems20122 citations

   ABIABI:AkademIndex/openalex/2012.article.000232

8. Distribution of impurities in base-depleted region of diode temperature sensor

   R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5

   ArticleChalcogenide Semiconductor Thin FilmsLow Temperature Physics20242 citations

   ABIABI:AkademIndex/openalex/2024.article.002075

9. Investigation of the heat transfer processes under the action of pulse power

   O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2

   ArticleSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20121 citations

   ABIABI:AkademIndex/openalex/2012.article.000230

10. Highly sensitive photodetector based on ge double-barrier punch-through structure

    O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +1

    ArticleSemiconductor Quantum Structures and DevicesTechnology and design in electronic equipment20151 citations

    ABIABI:AkademIndex/openalex/2015.article.000359

11. Research of Spectral Characteristics of a Thin-Film Structure with a Metal-Semiconductor Barrier

    A. V. Karimov, D. M. Yodgorova, F. A. Giyasova

    ArticleSurface Roughness and Optical MeasurementsFrontiers in Optics + Laser Science APS/DLS20191 citations

    ABIABI:AkademIndex/openalex/2019.article.000871

12. Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures

    A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev

    ChapterSemiconductor materials and interfacesInTech eBooks20111 citations

    ABIABI:AkademIndex/openalex/2026.other.510896

13. Control of the profile of the impurity distribution in epitaxial layers grown from a solution-melt with regulated volume and composition

    A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev

    ArticleSilicon and Solar Cell TechnologiesJournal of Engineering Physics and Thermophysics20111 citations

    ABIABI:AkademIndex/openalex/2026.other.564053

14. Features of growing epitaxial layers from solid solutions based on indium and aluminium arsenides

    D. M. Yodgorova

    ArticleSemiconductor Quantum Structures and DevicesSemiconductor Physics Quantum Electronics & Optoelectronics20040 citations

    ABIABI:AkademIndex/openalex/2004.article.000304

15. Optical signal detectors based on Au–nSi–Al and Au–nSi structures

    D. M. Yodgorova, E. N. Yakubov

    ArticleSemiconductor materials and interfacesDOAJ (DOAJ: Directory of Open Access Journals)20050 citations

    ABIABI:AkademIndex/openalex/2005.article.000421

16. Optic-Electrical Switches on the Basis of Modernized Multifunctional Photodiode Structures

    Kh. K. Aripov, D. M. Yodgorova, Артур Каримов +2

    ArticleOptical and Acousto-Optic Technologies20060 citations

    ABIABI:AkademIndex/openalex/2006.article.000410

17. Determination of potential distribution in a three-barrier structure

    D. M. Yodgorova, Physics-Sun", e-mail: [email protected]

    ArticleSemiconductor Quantum Structures and DevicesSemiconductor Physics Quantum Electronics & Optoelectronics20060 citations

    ABIABI:AkademIndex/openalex/2006.article.000413

18. The Semi-Conductor Optical Switch on a Base of Field Transistor

    Kh. K. Aripov, D. M. Yodgorova, Артур Каримов +2

    ArticleSensor Technology and Measurement Systems20060 citations

    ABIABI:AkademIndex/openalex/2006.article.000415

19. An injection-type field-emission photodiode

    Abdulaziz V. Karimov, D. M. Yodgorova

    ArticleAdvanced Semiconductor Detectors and MaterialsThe Scientific Issues of Ternopil Volodymyr Hnatiuk National Pedagogical University Series pedagogy20060 citations

    ABIABI:AkademIndex/openalex/2006.article.000418

20. Mechanism of drain current's saturation in the field transistor with p-n-junction

    D. M. Yodgorova

    ArticleAdvancements in Semiconductor Devices and Circuit DesignDOAJ (DOAJ: Directory of Open Access Journals)20060 citations

    ABIABI:AkademIndex/openalex/2006.article.000446

21. Physical-technological bases of reception sharp p–n-transition

    A. V. Karimov, D. M. Yodgorova, Sh.sh. Yuldashev +1

    ArticleSemiconductor Quantum Structures and DevicesDOAJ (DOAJ: Directory of Open Access Journals)20060 citations

    ABIABI:AkademIndex/openalex/2006.article.000447

22. Estimation of redistribution of potential in three-barrier structure

    A. V. Karimov, D. M. Yodgorova, Sh. Sh. Boltaeva +1

    ArticleSemiconductor Quantum Structures and DevicesDOAJ (DOAJ: Directory of Open Access Journals)20060 citations

    ABIABI:AkademIndex/openalex/2006.article.000448

23. Study of photoelectric characteristics of a microphoto terminal

    A. V. Karimov, D. M. Yodgorova, U. M. Buzrukov +2

    ArticleAdvanced optical system designDOAJ (DOAJ: Directory of Open Access Journals)20060 citations

    ABIABI:AkademIndex/openalex/2006.article.000451

24. Optimization of carrier concentration distribution across epitaxial layer thickness

    A. V. Karimov, D. M. Yodgorova, F. A. Giyasova +2

    ArticleSemiconductor Quantum Structures and DevicesSHILAP Revista de lepidopterología20070 citations

    ABIABI:AkademIndex/openalex/2007.article.000488

25. Features of the photo-electric characteristics of photoelectric converter of structures

    A. V. Karimov, D. M. Yodgorova, F. A. Giyasova +3

    ArticleSemiconductor Quantum Structures and DevicesDOAJ (DOAJ: Directory of Open Access Journals)20070 citations

    ABIABI:AkademIndex/openalex/2007.article.000490