Influence of neutron radiation on breakdown voltage of silicon voltage limiter
A. Z. RakhmatovJSC “FOTON”, Tashkent, UzbekistanД. А. ПетровJSC “FOTON” Branch Office, Kyiv, UkraineA. V. KarimovPhysical-Technical Institute of the Scientific Association “Physics-Sun” of Academy Sciences of Republic of Uzbekistan, Tashkent, UzbekistanD. M. YodgorovaPhysical-Technical Institute of the Scientific Association “Physics-Sun” of Academy Sciences of Republic of Uzbekistan, Tashkent, UzbekistanO. A. AbdulkhaevPhysical-Technical Institute of the Scientific Association “Physics-Sun” of Academy Sciences of Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Abstract
Experimental study of silicon voltage limiters’ breakdown voltage dependence on neutron radiation was conducted. It revealed that with increase of radiation density from 0.1×1014 to 2×1015 N/cm2 the breakdown voltage monotonously increases: the smaller the breakdown voltage, the higher radiation density is needed to provide nominal breakdown voltage. Test curves which may be used for stabilization (normalization) of the breakdown voltage for samples with technological variations are suggested.
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