Estimation of redistribution of potential in three-barrier structure
A. V. KarimovPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanD. M. YodgorovaPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSh. Sh. BoltaevaPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanL. Kh. ZoirovaPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Abstract
An experimental–computational method is proposed for determining the voltage drops across each junction of a three-barrier structure. The current–voltage characteristics of the blocking junctions are analyzed, and the asymmetries observed in experiments with the three-barrier homo m1–рGaAs–nGaAs–m2 structure are explained. The results can be used to evaluate photosensitivity, frequency properties, and to identify current transport mechanisms under external influences
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