A compensation method for measuring the junction temperature of a p +-p-n + silicon structure
O. A. AbdulkhaevPhysical-Technical Institute, Scientific Association Physics-Sun, Academy of Sciences of the Republic of Uzbekistan, ul. Bodomzor yuli 2b, Tashkent, 100084, UzbekistanD. M. YodgorovaPhysical-Technical Institute, Scientific Association Physics-Sun, Academy of Sciences of the Republic of Uzbekistan, ul. Bodomzor yuli 2b, Tashkent, 100084, UzbekistanA. V. KarimovPhysical-Technical Institute, Scientific Association Physics-Sun, Academy of Sciences of the Republic of Uzbekistan, ul. Bodomzor yuli 2b, Tashkent, 100084, UzbekistanA. A. KarimovPhysical-Technical Institute, Scientific Association Physics-Sun, Academy of Sciences of the Republic of Uzbekistan, ul. Bodomzor yuli 2b, Tashkent, 100084, UzbekistanA. A. KahorovPhysical-Technical Institute, Scientific Association Physics-Sun, Academy of Sciences of the Republic of Uzbekistan, ul. Bodomzor yuli 2b, Tashkent, 100084, UzbekistanJ. J. KalandarovPhysical-Technical Institute, Scientific Association Physics-Sun, Academy of Sciences of the Republic of Uzbekistan, ul. Bodomzor yuli 2b, Tashkent, 100084, Uzbekistan
ABI
Abstract
The principle of determining the temperature of an active junction is considered. The method is based on measuring the temperature dependence of the forward bias voltage using the compensation method that provides the direct calibration of the junction temperature as a function of the bias voltage. An example of a microwave diode on a p +-p-n + silicon structure is used to determine the dependences of the junction temperature on the magnitude of the flowing direct current and applied pulsed power with a variable frequency.
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