Article

Possibility of doping and using ZnSe, CdS, and GaP layers as down converters of Si and CuInSe2 solar cells

М. С. СаидовPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Uzbekistan

Applied Solar Energyjournal2007en

ABI

Abstract

The possibility and reasonability of developing down converters of Si and CuInSe2 solar cells based on Ge2P- and GaSb-doped GaP, ZnTe, and CdS is discussed. The case is considered when a down converter is a part of a solar cell’s p–n heterojunction, and the preparation conditions for the GaP(Ge2GaSb) layer of the Si substrate are specified.

Topics

Chalcogenide Semiconductor Thin Films Semiconductor materials and interfaces Silicon and Solar Cell Technologies

Identifiers

DOI: 10.3103/s0003701x07030097

Citations and references

Cited by 08 references

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