Article

Nanoscaled Silicon Based Heterostructures Formed by Interface Mediated Endotaxy

V. P. PopovInstittute of Semiconductor PhysicsI. E. TyschenkoInstittute of Semiconductor PhysicsElexander CherkovInstittute of Semiconductor PhysicsG. P. PokhilMSU Research Institute of Nuclear PhysicsВ. М. ФридманMSU Research Institute of Nuclear PhysicsM. Voelskow

ECS Transactionsjournal2007en

ABI

Abstract

New types of substrates are needed for further scaling in CMOS microelectronics. We speculate that this new type of materials can be semiconductor heterostructure on insulator (HOI) compatible with current silicon planar CMOS technology. In this work an effect of interface mediated endotaxial (IME) growth of thin InSb film at Si/SiO2 bonded interface was experimentally observed and investigated for the first time. Joint semiconductor material stack obtained by hydrogen transfer of one layer material (silicon) and endotaxially grown second one (indium antimonide) placed initially into amorphous silicon dioxide film is presented. Thermodynamic, kinetic and lattice mismatch parameter influences on IME process are considered.

Topics

Silicon Nanostructures and Photoluminescence Semiconductor Quantum Structures and Devices Nanowire Synthesis and Applications

Identifiers

DOI: 10.1149/1.2727390

Citations and references

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