High-resolution X-ray photoelectron spectroscopy and characteristic electron-energy loss spectroscopy of the electronic structure of phosphorus-implanted silicon and quantum dots of silicon dioxide with silicon impurities
O. K. KuvandikovSamarkand State University, Universitetskii bul’v. 15, Samarkand, 703029, UzbekistanЭ. У. АрзикуловSamarkand State University, Universitetskii bul’v. 15, Samarkand, 703029, UzbekistanА. И. КовалевCentral Institute of Ferrous Metallurgy, Moscow, 107005, RussiaD. I. TetelbaumPhysicotechnical Research Institute, Nizhni Novgorod, Russia
ABI
Abstract
The effect of phosphorus impurities on the electronic structure of silicon single crystals and SiO2: Si nanocomposites is studied. The SiO2: Si structures with phosphorus impurities that are annealed over 2 h at a temperature of 1000°C exhibit an increase in the photoluminescence peak related to Si nanocrystals. The experimentally determined densities of states in the valence and conduction bands of SiO2: Si composites are in good agreement with the local electronic structure in the vicinity of silicon impurities that is calculated within the approximation of linear muffin-tin orbitals.
Topics
Identifiers
Citations and references
Cited by 09 references
Metrics — AkademScholar · Coming soon