Article

Modification of Au-Ti(W, Cr, TiB x )-GaAs contacts properties caused by external influences

A. B. KamalovCombined Institute of Natural Sciences of the Karakalpak Branch of the Academy of Sciences of the Republic of Uzbekistan, Nukus, Uzbekistan

Radioelectronics and Communications Systemsjournal2009en

ABI

Abstract

In this paper it is considered an influence of gamma-radiation 60Co, microwave and ultrasonic processing on electro-physical properties and relaxation of internal stresses in Au-Ti(W, Cr, TiB x )-GaAs contacts, based on GaAs plate, containing n-n + structures of GaAs. Correlation between radius of curvature of GaAs plates and contact parameters is detected. It is shown experimentally, that modification of electro-physical parameters of diodes with Schottky barrier, based on GaAs is specified by internal stresses relaxation in gallium arsenide structures with contacts.

Topics

Semiconductor materials and interfaces Semiconductor Quantum Structures and Devices Intermetallics and Advanced Alloy Properties

Identifiers

DOI: 10.3103/s073527270903008x

Citations and references

Cited by 02 references

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