Article

Sensitivity of dislocation engineered Si p-n junctions to influence of illumination and ultrasound

A.Sh. DavletovaPhysical-Technical Institute, 2B Mavlyanov St., 700084, Tashkent, UzbekistanSmagul KarazhanovInstitute for Energy Technology, PO Box 40, NO-2027, Kjeller, Norway

Inorganic Materialsjournal2009en

ABI

Abstract

In this work it is shown that the dislocation engineered Si p-n junctions are sensitive to variations of illumination intensity. It is found that with the aim of ultrasound processing it is possible to purposefully modulate properties of the device structure.

Topics

Semiconductor materials and interfaces Silicon and Solar Cell Technologies Silicon Nanostructures and Photoluminescence

Identifiers

DOI: 10.1134/s002016850911003x

Citations and references

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