Article

Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity

Jiandong WeiBraunschweig University of Technology 1 Institute of Semiconductor Technology, , 38106 Braunschweig, GermanyS. F. LiBraunschweig University of Technology 1 Institute of Semiconductor Technology, , 38106 Braunschweig, GermanyA. É. AtamuratovBraunschweig University of Technology 1 Institute of Semiconductor Technology, , 38106 Braunschweig, GermanyH.-H. WehmannBraunschweig University of Technology 1 Institute of Semiconductor Technology, , 38106 Braunschweig, GermanyA. WaagBraunschweig University of Technology 1 Institute of Semiconductor Technology, , 38106 Braunschweig, Germany

Applied Physics Lettersjournal2010en

ABI

Abstract

The behavior of GaN surfaces during photoassisted Kelvin probe force microscopy is demonstrated to be strongly dependant on surface polarity. The surface photovoltage of GaN surfaces illuminated with above-band gap light is analyzed as a function of time and light intensity. Distinct differences between Ga-polar and N-polar surfaces could be identified, attributed to photoinduced chemisorption of oxygen during illumination. These differences can be used for a contactless, nondestructive, and easy-performable analysis of the polarity of GaN surfaces.

Topics

Force Microscopy Techniques and Applications Nanowire Synthesis and Applications GaN-based semiconductor devices and materials

Identifiers

DOI: 10.1063/1.3511541

Citations and references

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