Quantum corrections to resistance of microblock tellurium at ultralow temperatures under phonon freezing conditions
I. I. FarbshteǐnIoffe Physicotechnical Institute, St. Petersburg, 198021, RussiaA. V. ChernyaevIoffe Physicotechnical Institute, St. Petersburg, 198021, RussiaD. V. ShamshurIoffe Physicotechnical Institute, St. Petersburg, 198021, RussiaN. S. AverkievIoffe Physicotechnical Institute, St. Petersburg, 198021, Russia
ABI
Abstract
The low-temperature magnetoresistance of bulk tellurium samples with a microcrystalline structure is investigated. At ultralow temperatures T ≤ 1 K, an anomalous positive magnetoresistance (APMR), viz. the antilocalization effect, is observed. It is shown that this effect can be explained using the weak localization theory. The characteristic parameters of the theory are determined. It is concluded that charge carriers produce a predominant effect on the phase breakdown time in the APMR mode of elastic scattering from structure defects, which leads to intervalley transitions without spin flip.
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