Article

Raman scattering of light in semiconductor wires

B. É. ÉshpulatovSamarkand Branch of the Tashkent University of Information Technologies, ul. Shokhrukh mirzo 47A, Samarkand, 140104, Republic of UzbekistanЭ. У. АрзикуловNavoi Samarkand State University, Universitetskii bul’var 15, Samarkand, 140104, Republic of UzbekistanD. Sh. KhuzhanovaNavoi Samarkand State University, Universitetskii bul’var 15, Samarkand, 140104, Republic of Uzbekistan

Surface Engineering and Applied Electrochemistryjournal2010en

ABI

Abstract

The differential cross section of Raman scattering in semiconductor size-quantized wires is calculated. The interband transitions between the size-quantized subbands are considered. It is shown that, in the intermediate states, electron-hole pairs exist related to the subbands of the conduction and valence bands. The dependence of the scattering cross section versus the frequency of the exciting and scattered light is analyzed for an arbitrary polarization of the secondary radiation. The singularity of the differential cross section of the scattering is shown.

Topics

Semiconductor Quantum Structures and Devices Silicon Nanostructures and Photoluminescence Advanced Semiconductor Detectors and Materials

Identifiers

DOI: 10.3103/s106837551001014x

Citations and references

Cited by 06 references

Metrics — AkademScholar