Antireflection fianite and ZrO2 coatings for solar cells
A. N. BuzyninProkhorov General Physics Institute, Russian Academy of Sciences, Moscow, 119991, RussiaYu. N. BuzyninInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 603950, RussiaВ. В. ОсикоProkhorov General Physics Institute, Russian Academy of Sciences, Moscow, 119991, RussiaV. I. PanovProkhorov General Physics Institute, Russian Academy of Sciences, Moscow, 119991, RussiaБ. Н. ЗвонковPhysicotechnical Institute for Scientific Research, Nizhny Novgorod, 603950, RussiaI. V. ChinarevaFGUP NPO Orion, State Scientific Center of the Russian Federation, Moscow, 111123, RussiaP. E. KhakaushevFGUP NPO Orion, State Scientific Center of the Russian Federation, Moscow, 111123, RussiaM. A. TrishenkovFGUP NPO Orion, State Scientific Center of the Russian Federation, Moscow, 111123, Russia
ABI
Abstract
Fianite is a promising multipurpose material for new electronic technologies owing to its unique combination of physical and chemical properties. It can be used in virtually all of the main technological stages of the production of micro-, opto-, and SHF-electronics; in particular, as a bulk dielectric substrate and a material for buffer layers in heteroepitaxy; as a material for insulating, antireflection, and protective layers in device elements; and as a gate dielectric [1–3]. In this work, we consider the possibilities for using fianite and ZrO2 as an antireflection coating for silicon solar cells (SCs) and SCs based on InGaAsP heterostructures.
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