Electrophysical properties of the “nano-object-semiconductor” new contact structure
Abstract
We propose a theoretical model of formation of a space charge region in basically new contact structures consisting of a semiconductor base and nanoinclusions deposited on it. The properties of the new type of contact (relating to its structure and length) differ in principle from those of analogous contact structure of the type of Schottky barriers, solid-state p-n junctions, and heterojunctions. The theoretical model of the new contact structure developed here is used for explaining effective phototransformation in a wide infrared range of solar radiation, which was observed in experiments. It is shown that effective absorption of infrared radiation becomes possible due to the extension of the space charge region, which is ensured by the formation of a large number of nanosize p-n junctions directly on the substrate. The substrate in this case can be made of relatively cheap materials.