Article

Influence of the radius of the quantum dot and the nonquilibrium degree on the conversion efficiency of light emitting diodes

Х. Б. АшуровInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, UzbekistanM. M. AdilovInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, UzbekistanС. Е. МаксимовInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, UzbekistanБ. Л. ОксенгендлерInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, Uzbekistan

Nanosystems Physics Chemistry Mathematicsjournal2015en

ABI

Abstract

We describe the features of the conversion of electrical current into light in light diodes based on an organic matrix containing semiconductor quantum dots. It is shown that the relaxation channels of nonequilibrium electron-hole plasma injected into the quantum dot of the current density through the device. The conversion efficiency increases significantly with a decrease in the radius of the quantum dot.

Topics

Semiconductor Quantum Structures and Devices GaN-based semiconductor devices and materials Semiconductor Lasers and Optical Devices

Identifiers

DOI: 10.17586/2220-8054-2015-6-6-833-836

Citations and references

Cited by 07 references

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