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Correlation between the Low-Temperature Photoluminescence Spectra and Photovoltaic Properties of Thin Polycrystalline CdTe Films

Bozorboy Joboralievich AkhmadalievFerghana Polytechnic Institute, Ferghana, UzbekistanOlmosbek MamatovFerghana Polytechnic Institute, Ferghana, UzbekistanБ. З. ПолвоновFerghana Polytechnic Institute, Ferghana, UzbekistanN. Kh. Yuldashev
ABI

Abstract

A dominant intrinsic luminescence band, which is due to the surface potential barriers of crystalline grains, and an edge doublet, which arises as an LO-phonon repetition of the e-h band, has been revealed in the low-temperature photoluminescence spectra of fine-grained obliquely deposited films. Doping film with In impurity leads to quenching of the doublet band, while further thermal treatment causes activation of the intrinsic band, the half-width and the blue shift of the red edge of which correlates with the maximum value of anomalously high photovoltage generated by the film.

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