Polarization-Dependent Photocurrent in p-GaAs
Rustam Yavkachovich RasulovFerghana State University, Chair of Physics
ABI
Abstract
An expression for the spectral and temperature dependences of a photocurrent arising as a result of the linear photovoltaic effect in such semiconductors as gallium arsenide with the hole conduction has been derived. The photocurrent is shown to arise owing to the presence of terms with different parities in the effective hole Hamiltonian. Theoretical and experimental results have been compared.
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