Article

Deep Level Transient Spectroscopy of Silicon, Doped by Zirconium

Shakhrukh Kh. DalievNational University of Uzbekistan named after Mirzo Ulugbek, 100174, Tashkent, Republic of Uzbekistan

International Journal for Research in Applied Science and Engineering Technologyjournal2018en

ABI

Abstract

By means of methods transient capacitance spectroscopy of deep levels and photo-capacitance studied the formation of defects in silicon, doped Zirconium. Discovered that diffusive introduction of zirconium into the silicon leads to the formation of three deep levels with fixed ionization energies of Ec-0.22 eV, Ec-0.42 eV and Ev+0.30 eV, and dominate the last two levels. It is established that the efficiency of the formation of deep centers associated with the atoms of zirconium increases with temperature diffusion and the cooling rate after diffusion.

Topics

Ion-surface interactions and analysis Silicon and Solar Cell Technologies Integrated Circuits and Semiconductor Failure Analysis

Identifiers

DOI: 10.22214/ijraset.2018.3741

Citations and references

Cited by 1 1 references

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