Fabrication and Properties of nSi–pCdTe Heterojunctions
I.B. SapaevTashkent Institute of Irrigation and Agricultural Mechanization Engineers, ul. Kari Niyazova 39, 100000, Tashkent, UzbekistanШ. А. МирсагатовPhysicotechnical Institute, Fizika–Solntse Research and Production Association, Academy of Sciences of Uzbekistan, ul. Chingiza Aitmatova 2B, 100084, Tashkent, UzbekistanБ. СапаевTashkent State Agrarian University, Universitetskaya ul. 2, 100700, Tashkent, UzbekistanМ. Б. СапаеваPhysicotechnical Institute, Fizika–Solntse Research and Production Association, Academy of Sciences of Uzbekistan, ul. Chingiza Aitmatova 2B, 100084, Tashkent, Uzbekistan
ABI
Abstract
nSi–pCdTe heterostructures have been produced by growing a pCdTe layer on an nSi substrate using thermal evaporation in vacuum at a residual pressure of 10–3 Pa. We have studied the elemental concentration depth profiles across the pCdTe layer and obtained current–voltage curves and spectral characteristics of the nSi–pCdTe heterostructures.
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