Features of the Formation of Impurity-Defective Centers in Silicon Doped with Chromium
Sharifa B. UtamuradovaInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, 100057, Tashkent, Uzbekistan.Shakhrukh Kh. DalievInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, 100057, Tashkent, Uzbekistan.Yuldoshali RavshanovInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, 100057, Tashkent, Uzbekistan.Kakhramon FayzullaevInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, 100057, Tashkent, Uzbekistan.ShKh UtamuradovaDalievKhK DalievFayzullaevS UtamuradovaInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, 100057, Tashkent, Uzbekistan.NasriddinovIsmoilovPapanasam RagaviEsakkiK RaveyMV EmtsevT MashovetsL MilnesA RohatgiI DavisR HopkinsP MullinMcD LangG MillerL KimerlingL BermanA LebedevS BrothertonP BradleyE Weber
ABI
Abstract
In this work, the processes of the formation of impurity-defect centers in silicon doped with chromium are investigated. It was found that the diffusion introduction of Cr impurity into n-Si leads to the formation of three deep levels with fixed ionization energies: C -0.21 eV, C -0.41 eV, and C -0.51 eV, and in p-Sitwo levels V +0.20 eV, V +0.41 eV. It is shown that only the levels C -0.41 eV and C -0.51 eV, V +0.20 eV are associated with chromium atoms in silicon. It was found that the Cr atoms introduced into Si during its growth are electrically neutral. It is shown that high-temperature treatment (HTT) in the range 10001200 of n-Si<Cr> samples leads to activation of Cr atoms.
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