Formation of Nanoscale Structures on the Surface of MgO Films Upon Bombardment with Low-Energy Ions
Abstract
Mg nanofilms 1–2 nm thick are obtained on a MgO/Mg surface by bombardment with Ar+ ions. It is shown that to obtain homogeneous Mg films, the most optimal modes of ion implantation are: energy of E0 = 1–5 keV, dose of D = 8 × 1016 cm–2, and an angle of ion incidence of α = 0°–10° relative to the normal. The composition, electronic structure, and surface morphology of the obtained films are investigated. It is found that a transition layer with a thickness of ∼20–25 Å, which is 4–5 times greater than the thickness of the Mg film, appears at the Mg—MgO boundary. In all cases, the structure of the Mg film is close to amorphous. An approximate energy-band diagram of the Mg/MgO system is constructed. The obtained thin Mg layers are potentially suitable for creating device structures of the metal–insulator–semiconductor (MIS) type, nanoscale contacts and barrier layers on the surface of semiconductor and dielectric films.