Article

Getting Variable-gap Solid Solution Si1−xGex From a Liquid Phase

A. Sh. RazzakovUrgench State UniversityA. LatipovaUrgench State UniversityAlibek QodirovUrgench State University

Bulletin of Science and Practicejournal2021en

ABI

Abstract

Using experimental data, as well as using theoretical calculations, the results of studies of the composition of melt solutions (Sn + Ge + Si, Ga + Ge + Si) from temperature conditions are presented. Single-crystal films of a graded-gap solid solution Si1-xGex (0<x<1) on Si <111> substrates were obtained by liquid-phase epitaxy from a limited tin, gallium solution-melt. Optimal technological growth modes are found for obtaining crystalline perfect epitaxial layers and structures.

Topics

Semiconductor Quantum Structures and Devices Semiconductor materials and interfaces Silicon Nanostructures and Photoluminescence

Identifiers

DOI: 10.33619/2414-2948/64/20

Citations and references

Cited by 04 references

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