Article

Enhanced and Passivated Co-doping Effect of Organic Molecule and Bromine on Graphene/HfO<sub>2</sub>/Silicon Metal–Insulator–Semiconductor (MIS) Schottky Junction Solar Cells

Kalyani D. KadamDepartment of Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of KoreaMalik Abdul RehmanNational University of UzbekistanHonggyun KimDepartment of Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of KoreaShania RehmanDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of KoreaMuhammad Asghar KhanDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of KoreaHarshada PatilDepartment of Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of KoreaJamal AzizDepartment of Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of KoreaSewon ParkDepartment of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of KoreaMuhammad Abdul BasitDepartment of Materials Science and Engineering, Institute of Space Technology, Islamabad 44000, PakistanKarim KhanInstitute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, PR ChinaAyesha Khan TareenSchool of Mechanical Engineering, Dongguan University of Technology, Dongguan 523808, ChinaMuhammad Farooq KhanDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of KoreaDeok‐kee KimDepartment of Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea

ACS Applied Energy Materialsjournal2022en

ABI

Abstract

Graphene (Gr) has shown a significant role in photovoltaic applications due to its exclusive properties. In this study, we established a facile approach to fabricate p-Gr/HfO2/n-silicon, a metal–insulator–semiconductor (MIS) Schottky junction solar cell. Nevertheless, the poor work function of Gr and high-density defect states at the Gr/Si interface obstruct the efficiency of solar cells. To avoid this problem, the optimal thickness of the interfacial layer (HfO2) is employed, which circumvents the recombination process at the Gr/Si interface. Additionally, to boost the Schottky barrier height and Gr’s work function, a combination of p-type co-doping of organic molecule 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) and Br is studied. Therefore, a higher work function aims to encourage the built-in potential, which ultimately improves the open-circuit voltage and current density and deteriorates the series resistance of solar cells. Hence, a unique combination of dopants resulted in improved efficiency of up to 12.31%. Moreover, devices with double layer (MoO3/HfO2) passivation have been enabled to provide outstanding stability for over 180 days. The combined effect of p-type co-doping and double layer passivation developed a solar cell having a significant efficiency of 14.01%. Thus, this work intends to show a promising, high-performance and stable MIS Schottky junction solar cell for massive commercialization of photovoltaic devices.

Topics

Nanowire Synthesis and Applications Semiconductor materials and interfaces Graphene research and applications

Identifiers

DOI: 10.1021/acsaem.2c01194

Citations and references

Cited by 1 52 references

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