High-purity ammonium acetate solution for low-background electronics
N.A. MirzayevInstitute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku, 1143, AzerbaijanKhagani Farzulla MammadovInstitute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku, 1143, AzerbaijanЖ. П. БурмийInstitute of Microelectronics Technology and High-Purity Materials RAS, Chernogolovka, 142432, Russian FederationD. V. KaraivanovInstitute for Nuclear Research and Nuclear Energy, 1784, Sofia, BulgariaElena KurakinaDepartment of High-Energy Chemistry and Radioecology, D. Mendeleev University of Chemical Technology of Russia, Moscow, 125047, Russian FederationN.T. TemerbulatovaJoint Institute for Nuclear Research (JINR), Dubna, 141980, Russian FederationAyagoz BaimukhanovaJoint Institute for Nuclear Research (JINR), Dubna, 141980, Russian FederationA. V. RakhimovInstitute of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent, 100214, UzbekistanS. RozovJoint Institute for Nuclear Research (JINR), Dubna, 141980, Russian FederationG. K. SalimovaInstitute of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent, 100214, UzbekistanA. A. MirsagatovaInstitute of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent, 100214, UzbekistanIlkham I. SadikovInstitute of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent, 100214, UzbekistanD. V. FilosofovJoint Institute for Nuclear Research (JINR), Dubna, 141980, Russian FederationE. YakushevJoint Institute for Nuclear Research (JINR), Dubna, 141980, Russian Federation
ABI
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