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Works cited by this work

637 works

Work: Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

  1. Ce-doping induced enhancement of resistive switching performance of Pt / NiFe 2 O 4 / Pt memory devices

    Aize Hao, Shuai He, Ni Qin +2

    Article20173 citations
    ABI

  2. Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM

    Qi Liu, Jun Sun, Hangbing Lv +6

    Article20123 citations
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  3. In-memory computing with resistive switching devices

    Daniele Ielmini, H.‐S. Philip Wong

    Article20183 citations
    ABI

  4. A MoS<sub>2</sub>/PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility

    Shuiyuan Wang, Chunsheng Chen, Zhihao Yu +8

    Article20183 citations
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  5. Nonvolatile Memories Based on Graphene and Related 2D Materials

    Simone Bertolazzi, Paolo Bondavalli, Stephan Roche +5

    Review article20193 citations
    ABI

  6. Recent Progress in Artificial Synapses Based on Two-Dimensional van der Waals Materials for Brain-Inspired Computing

    Seunghwan Seo, Je‐Jun Lee, Hojun Lee +5

    Article20203 citations
    ABI

  7. A synaptic memristor based on two-dimensional layered WSe<sub>2</sub> nanosheets with short- and long-term plasticity

    Songwen Luo, Kanghong Liao, Peixian Lei +8

    Article20213 citations
    ABI

  8. Nanostructured Materials and Architectures for Advanced Optoelectronic Synaptic Devices

    Nasir Ilyas, Jinyong Wang, Chunmei Li +7

    Article20213 citations
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  9. Novel charm of 2D materials engineering in memristor: when electronics encounter layered morphology

    Saima Batool, Muhammad Idrees, Shirui Zhang +2

    Review article20223 citations
    ABI

  10. Competitive Hebbian learning through spike-timing-dependent synaptic plasticity

    Sen Song, Kenneth D. Miller, L. F. Abbott

    Article20002 citations
    ABI

  11. Resistive switching memory effect of ZrO2 films with Zr+ implanted

    Qi Liu, Weihua Guan, Shibing Long +3

    Article20082 citations
    ABI

  12. Normally-off Logic Based on Resistive Switches—Part I: Logic Gates

    Simone Balatti, Stefano Ambrogio, Daniele Ielmini

    Article20152 citations
    ABI

  13. Field-induced resistive switching in metal-oxide interfaces

    S. Tsui, A. Baikalov, J. Cmaidalka +6

    Article20042 citations
    ABI

  14. Ultrafast Synaptic Events in a Chalcogenide Memristor

    Yi Li, Yingpeng Zhong, Lei Xu +4

    Article20132 citations
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  15. Experimental study for selection of electrode material for ZnO‐based memristors

    Ashish Kumar, Maryam Shojaei Baghini

    Article20142 citations
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  16. Dielectric breakdown I: A review of oxide breakdown

    J.F. Verweij, J.H. Klootwijk

    Review article19962 citations
    ABI

  17. A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories

    Myoung‐Jae Lee, Sunae Seo, D.‐C. Kim +11

    Article20062 citations
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  18. Nonvolatile Memory with Multilevel Switching: A Basic Model

    M. J. Rozenberg, Isao Inoue, M. J. Sánchez

    Article20042 citations
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  19. High Uniformity of Resistive Switching Characteristics in a Cr/ZnO/Pt Device

    Wen-Yuan Chang, Hsin-Wei Huang, Wei‐Ting Wang +3

    Article20122 citations
    ABI

  20. Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films

    Chan‐Ho Yang, Jan Seidel, Steven Kim +14

    Article20092 citations
    ABI

  21. Low-Frequency Negative Resistance in Thin Anodic Oxide Films

    T. W. Hickmott

    Article19622 citations
    ABI

  22. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

    Julien Borghetti, Gregory S. Snider, Philip J. Kuekes +3

    Article20102 citations
    ABI

  23. In situ imaging of the conducting filament in a silicon oxide resistive switch

    Jun Yao, Lin Zhong, Douglas Natelson +1

    Article20122 citations
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  24. Phase-change materials for rewriteable data storage

    Matthias Wuttig, Noboru Yamada

    Article20072 citations
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  25. Memristive behavior of ZnO/NiO stacked heterostructure

    Rui Zhang, Sh. U. Yuldashev, Jung‐Kyu Lee +3

    Article20132 citations
    ABI