Combined Scaling of Nanochip Generators for Betavoltaics
V. GurskayaSamara State Technical University, Samara, RussiaM. V. DolgopolovKorolev National Research University, Samara, RussiaMaksim ElisovKorolev National Research University, Samara, RussiaVitaliy RadenkoS. A. RadzhapovPhysical-Technical Institute of the “Fizika-Solntse” Research and Production Association, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Abstract
A concept and model of a combined 4-stage scaling of semiconductor power converter chips with nanosized heterojunctions to provide maximum power is proposed. A variant of optimizing the scaling solution for a modular structure is implemented by heterojunctions with sequence variations $$Au(Al) - (P(N) - 3C - SiC{\text{/}}p(n) - Si) - (n(p) - aGe) - Al(Au)$$ with an increase in the concentration and direction of movement of nonequilibrium carriers and further upconversion of the voltage with charge pumping.
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