Efficiency of Activated Nano-Heterojunctions on Silicon and Silicon Carbide Substrates
Abstract
The concept, model, and examples of activated nanoscale heterojunctions on special silicon carbide and silicon substrates to ensure maximum power with combined geometric and quantitative scaling of semiconductor energy converter chips are considered. The issue of maximum efficiency of energy conversion and efficiency of separation of electron-hole pairs is investigated. A variant of optimizing the scaling solution is implemented by heterojunctions with variations in the sequences of layers with an increase in the concentration and direction of movement of nonequilibrium carriers for further increasing voltage conversion with charge pumping. Numerical simulation was performed to test the model with thin layers of GaN, GaP on SiC, SiC/Si. For the first time, definitions of activation of the heterojunction and activated nanoheterojunction as a fundamental structure are proposed. The accuracy of the proposed models is compared with the accuracy of known models, and it is shown that the results obtained are better than some solutions of these models known in the literature.