Quantum-Dot-Induced Modification of Surface Functionalization for Active Applications of Whispering Gallery Mode Resonators
Inga BriceLaboratory of Quantum Optics, Institute of Atomic Physics and Spectroscopy, University of Latvia, Jelgavas 3, LV-1004 Riga, LatviaVyacheslav V. KimDepartment of Physics and Chemistry, Chirchik State Pedagogical University, 104 Amir Temur, Chirchik 111700, UzbekistanArmands OstrovskisInstitute of Telecommunications, Riga Technical University, Azenes 12, LV-1048 Riga, LatviaArvids SedulisInstitute of Telecommunications, Riga Technical University, Azenes 12, LV-1048 Riga, LatviaToms SalgalsInstitute of Telecommunications, Riga Technical University, Azenes 12, LV-1048 Riga, LatviaSandis SpolītisInstitute of Telecommunications, Riga Technical University, Azenes 12, LV-1048 Riga, LatviaVjačeslavs BobrovsInstitute of Telecommunications, Riga Technical University, Azenes 12, LV-1048 Riga, LatviaJānis AlnisLaboratory of Quantum Optics, Institute of Atomic Physics and Spectroscopy, University of Latvia, Jelgavas 3, LV-1004 Riga, LatviaR. A. GaneevDepartment of Physics and Chemistry, Chirchik State Pedagogical University, 104 Amir Temur, Chirchik 111700, Uzbekistan
ABI
Abstract
Quantum dots can modify the properties of the whispering gallery mode resonators (WGMRs) used in various potential applications. A deposition of a suitable nanomaterial for the surface functionalization of WGMRs allows for the achievement of high quality (Q) factors. Here, we show that the WGMR surface can be functionalized using quantum dots. We demonstrate that WGMRs covered with thin layers of HgS and PbS quantum dots are suitable for third-harmonic generation due to the high Q factor of the developed microresonators, thus significantly lowering the pumping power required for nonlinear optical interactions.
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