Determination of solubility of cobalt in singlecrystal silicon method neutron activation
Tashmetov M. Yu.Institute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, UzbekistanM. Sharif Sh.Institute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, UzbekistanT.S. TillaevInstitute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, UzbekistanM. N. ErdonovInstitute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, UzbekistanHamid KholmedovTashkent University of Information Technologies, Tashkent, Uzbekistan
ABI
Abstract
The possibility of instrumental neutron activation analysis is revealed for determining the solubility of cobalt in single-crystal silicon. It was shown that in n-Si in the diffusion temperature range of 1000-1250 o C the total solubility of the 60 Co impurity varies within the concentration range of 2.8·10 14 -9·10 15 cm -3 , and the electrically active concentration grows from 10 13 to 3·10 14 cm -3 . In order to reduce the error in determining the concentration of 10 13 in doped Si samples, it is suggested to use the parent stable isotope rather than the daughter cobalt radionuclide. Keywords: monocrystalline silicon, cobalt impurity, diffusion, neutron activation analysis, solubility, irradiation, radionuclide, concentration.
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