Article

High photoconductivity of silicon with nanoclusters of manganese atoms to create efficient solar cells

Mavlonov GiyosiddinTashkent state technical university, Tashkent, UzbekistanUsmonov AnvarTashkent state technical university, Tashkent, UzbekistanZikrilloyev IslomshokhTashkent state technical university, Tashkent, UzbekistanRakhmanov UlugbekTashkent state technical university, Tashkent, Uzbekistan

AIP conference proceedingsjournal2023en

ABI

Abstract

The paper investigates the features of the photoconductivity of silicon with multiply charged nanoclusters of manganese atoms. It is shown that in such samples anomalously high impurity photoconductivity is observed in the spectral region λ = 1.8 - 3 µm. It was also shown that such samples have a giant residual photoconductivity. This material p-Si <B, Mn> with nanoclusters of manganese atoms is a very promising material not only for the development of fundamentally new photovoltaic devices, but also for the creation of efficient solar cells operating in the infrared region.

Topics

Silicon and Solar Cell Technologies Semiconductor materials and interfaces Silicon Nanostructures and Photoluminescence

Identifiers

DOI: 10.1063/5.0117635

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