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Works cited by this work

13 works

Work: Effect of Be Co-Doping on Anisotropy of Magnetoresistance in GaMnAs Epitaxial Layers

  1. Physics of Semiconductor Devices

    Samarth Jain, S. Radhakrishna

    Article198715 citations
    ABI

  2. Metal–insulator transition and magnetotransport in III–V compound diluted magnetic semiconductors

    Y. Iye, A. Oiwa, Akira Endo +5

    Article19994 citations
    ABI

  3. Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

    A. S. Gazizulina, Aslan Nasirov, A. A. Nebesniy +2

    ArticleZnO doping and propertiesSemiconductors20213 citations
    ABI

  4. Magnetic anisotropy investigations of (Ga,Mn)As with a large epitaxial strain

    Piotr Juszyński, Marta Gryglas-Borysiewicz, Jacek Szczytko +4

    Article20153 citations
    ABI

  5. Uniaxial in-plane magnetic anisotropy of Ga1−xMnxAs

    U. Welp, V. K. Vlasko‐Vlasov, Andreas Menzel +4

    Article20043 citations
    ABI

  6. Effects of film thickness and annealing on the magnetic properties of GaMnAsP ferromagnetic semiconductor

    Jihoon Chang, Seonghoon Choi, Kyung Jae Lee +7

    Article20192 citations
    ABI

  7. Untitled

    Other2 citations
    ABI

  8. Temperature-induced transition of magnetic anisotropy between in-plane and out-of-plane directions in GaMnAs film

    Sangyeop Lee, Sangyeop Lee, Seonghoon Choi +7

    Article20162 citations
    ABI

  9. Anisotropy of magnetoresistance in Be Co-doped GaMnAs

    P. B. Parchinskiy, Fucheng Yu, P. Sekar +1

    ArticleZnO doping and propertiesJournal of Magnetism and Magnetic Materials20081 citations
    ABI

  10. Untitled

    Other1 citations
    ABI

  11. Untitled

    Other1 citations
    ABI

  12. Untitled

    Other1 citations
    ABI

  13. Untitled

    Other1 citations
    ABI