Article

Sensitivity to pressure and light of a depletion-mode field-effect transistor

Akmal TurayevBukhara State University, 11- Mukhammad Ikbal St., Bukhara, 200117, Uzbekistan

E3S Web of Conferencesjournal2023en

ABI

Abstract

There are presented the results of experimental investigation of sensitivity of field effect transistor in two-terminal connection mode with pinched-off channel to the impact of pressure and light. It is shown that the depletion-mode field effect transistor has a high sensitivity to pressure and light.

Topics

Semiconductor Quantum Structures and Devices Semiconductor Lasers and Optical Devices Quantum and electron transport phenomena

Identifiers

DOI: 10.1051/e3sconf/202338907016

Citations and references

Cited by 07 references

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