Works cited by this work

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Work: Pressure as the device for changing electric parameters of Schottky diodes based on Si mono crystal

1. Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor

   С. И. Власов

   ArticleAdvanced Materials and Semiconductor TechnologiesSemiconductor Physics Quantum Electronics & Optoelectronics20102 citations

   ABIABI:AkademIndex/openalex/2010.article.000171

2. Untitled

   Other1 citations

   ABIABI:AkademIndex/openalex/2026.other.716263

3. Untitled

   Other1 citations

   ABIABI:AkademIndex/openalex/2026.other.716264