STUDYING THE INFLUENCE OF PROTON IRRADIATION ON THE DISTRIBUTION PROFILE OF Pt AND Cr IN SURFACE LAYERS n-Si˂Pt˃, n-Si˂Сr˃ USING ELLIPSOMETRIC SPECTROSCOPY

Abstract

In this work, the effect of high-temperature doping and proton irradiation on the depth profile and the creation of layers on the surface of single-crystal silicon was studied. The study used singlecrystal n-type silicon samples doped with phosphorus during growth. These samples were first doped with platinum and chromium and after polishing they were irradiated with protons with an energy of 2 MeV, a dose of 5.1 × 1014 cm–2 at the EG-5 accelerator. Studies of the optical properties of the sample surface were carried out using an ELLIPS-1991 spectroscopic ellipsometer at room temperature

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DOI

10.62476/apr62.83

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