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Works cited by this work

8 works

Work: STUDYING THE INFLUENCE OF PROTON IRRADIATION ON THE DISTRIBUTION PROFILE OF Pt AND Cr IN SURFACE LAYERS n-Si˂Pt˃, n-Si˂Сr˃ USING ELLIPSOMETRIC SPECTROSCOPY

  1. Raman spectroscopy of silicon, doped with platinum and irradiated by protons

    Sharifa B. Utamuradova, Kh.S. Daliev, А. В. Станчик +1

    ArticleSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20239 citations
    ABI

  2. Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure

    N. A. Turgunov, Elmurod Kh. Berkinov, D. Kh. Mamajonova

    ArticleSilicon and Solar Cell TechnologiesJournal of Nano- and Electronic Physics20218 citations
    ABI

  3. Accumalations of impurity Ni atoms and their effect on the electrophysical properties of Si

    N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova

    Article20237 citations
    ABI

  4. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

    Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

    ArticleSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal20234 citations
    ABI

  5. Raman spectroscopy of PtSi formation at the Pt/Si(100) interface

    J. C. Tsang, Y. Yokota, R. Matz +1

    Article19844 citations
    ABI

  6. Nuclear instruments and methods in physics research section B: Beam interactions with materials and atoms

    E. Punzón-Quijorna

    Article20243 citations
    ABI

  7. On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures

    Shakhrukh Kh. Daliev, Fayzulla A. Saparov

    ArticleSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20233 citations
    ABI

  8. Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties

    R. S. Madatov, A. S. Alekperov, F.N. Nurmammadova +2

    Article20242 citations
    ABI