Skip to main content
AkademIndex

Products

For developers

AkademBaseOpen API for the ecosystem

N. A. Turgunov

8 works

Research Institute of Physics of Semiconductors and Microelectronics at the National University of Uzbekistan, 20, Yangi Almazar St., 100057 Tashkent, Republic of Uzbekistan

  1. Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure

    N. A. Turgunov, Elmurod Kh. Berkinov, D. Kh. Mamajonova

    ArticleSilicon and Solar Cell TechnologiesJournal of Nano- and Electronic Physics20218 citations
    ABI

  2. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

    N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

    ArticleSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 citations
    ABI

  3. Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

    G. Gulyamov, Sharifa B. Utamuradova, Mukhamadjon G. Dadamirzaev +5

    ArticleSemiconductor Quantum Structures and DevicesEast European Journal of Physics20235 citations
    ABI

  4. Formation of Cobalt Impurity Microinclusions in Silicon Single Crystals

    N. A. Turgunov

    ArticleSilicon and Solar Cell TechnologiesInorganic Materials20183 citations
    ABI

  5. INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI

    N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova

    ArticleSilicon and Solar Cell TechnologiesAmerican Journal Of Applied Science And Technology20231 citations
    ABI

  6. Structure and composition of admixture precipitates of nickel in silicon

    S.Z. Zajnabidinov, N. A. Turgunov, A.R. Turaev

    ArticleMaterial Properties and ApplicationsUzbekiston Fizika Zhurnali20000 citations
    ABI

  7. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

    N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

    ArticleSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20240 citations
    ABI

  8. Formation of Impurity Accumulations in Silicon Doped with Nickel and Copper

    S.Z. Zainabidinov, Sh. Akbarov, N. A. Turgunov +2

    ArticleSilicon and Solar Cell TechnologiesE3S Web of Conferences20250 citations
    ABI