R.M. Turmanova

4 works

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan

1. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

   N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

   ArticleSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 citations

   ABIABI:AkademIndex/openalex/2026.other.279528

2. INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI

   N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova

   ArticleSilicon and Solar Cell TechnologiesAmerican Journal Of Applied Science And Technology20231 citations

   ABIABI:AkademIndex/openalex/2026.other.585531

3. Formation of Impurity Accumulations in Silicon Doped with Nickel and Copper

   S.Z. Zainabidinov, Sh. Akbarov, N. A. Turgunov +2

   ArticleSilicon and Solar Cell TechnologiesE3S Web of Conferences20250 citations

   ABIABI:AkademIndex/openalex/2025.article.005652

4. Effect of Impurity Clusters on Optical Properties of Nickel and Copper Doped Single-Crystal Silicon

   S. Z. Zainabidinov, N.A. Turgunov, Akramjon Y. Boboev +6

   ArticleSilicon and Solar Cell TechnologiesEast European Journal of Physics20260 citations

   ABIABI:AkademIndex/openalex/2026.article.011338