E.Kh. Berkinov

1 works

Research Associate Scientific Research Institute Of Semiconductor Physics And Microelectronics At The National University Of Uzbekistan, Tashkent, Uzbekistan

1. INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI

   N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova

   ArticleSilicon and Solar Cell TechnologiesAmerican Journal Of Applied Science And Technology20231 citations

   ABIABI:AkademIndex/openalex/2026.other.585531