N. B. Khaytimmetov

2 works

Research Institute of Physics of Semiconductors and Microelectronics at the National University of Uzbekistan, 100057, Tashkent, Republic of Uzbekistan

1. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

   N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

   ArticleSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20240 citations

   ABIABI:AkademIndex/openalex/2024.article.003369

2. Formation of Impurity Accumulations in Silicon Doped with Nickel and Copper

   S.Z. Zainabidinov, Sh. Akbarov, N. A. Turgunov +2

   ArticleSilicon and Solar Cell TechnologiesE3S Web of Conferences20250 citations

   ABIABI:AkademIndex/openalex/2025.article.005652