On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures
Shakhrukh Kh. DalievInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, UzbekistanFayzulla A. SaparovInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan
ABI
Abstract
Capacitance spectroscopy was used to study the capacitive-voltage characteristics of multilayer structures with a Si-SiO2 transition layer in Al-SiO2-n-Si type samples fabricated by the thermal oxidation of a semiconductor. It is shown that the inhomogeneous distribution of the density of surface states is a localized electroactive center at the very semiconductor-dielectric interface, due to over-barrier charge emission or thermal ionization of impurity centers.