Works citing this work

1 works

Work: Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion

1. Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction

   I.B. Sapaev, S.O. Sadullaev, Kh. N. Juraev +4

   ArticleSemiconductor materials and interfacesResults in Physics20260 citations

   ABIABI:AkademIndex/openalex/2026.article.006836