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Numerical calculation of the probability of an electronic transition in a two-barrier heterostructure by a thin nanolayer

Paziljon BaymatovNamangan State University, 316 Uychi Street, 716019, Namangan, UzbekistanBakhrom AbdulazizovNamangan State University, 316 Uychi Street, 716019, Namangan, UzbekistanMakhmudjon TokhirjonovNamangan State University, 316 Uychi Street, 716019, Namangan, Uzbekistan
The European Physical Journal Bjournal2024en
ABI

Abstract

No abstract available.

Topics

Surface and Thin Film PhenomenaQuantum and electron transport phenomenaSemiconductor materials and devices

Identifiers

DOI
10.1140/epjb/s10051-024-00689-1

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Cited by 017 references
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