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Works cited by this work

17 works

Work: Numerical calculation of the probability of an electronic transition in a two-barrier heterostructure by a thin nanolayer

  1. Electronic States in Semiconductor Heterostructures

    G. Bastard, J. A. Brum, R. Ferreira

    Chapter19915 citations
    ABI

  2. Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures

    И. С. Васильевский, Г. Б. Галиев, E. A. Klimov +7

    Article20112 citations
    ABI

  3. InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric

    Fei Xue, Han Zhao, Yen‐Ting Chen +3

    Article20112 citations
    ABI

  4. Structural and electrical properties of quantum wells with nanoscale InAs inserts in In y Al1 − y As/In x Ga1 − x As heterostructures on InP substrates

    А. Л. Васильев, И. С. Васильевский, Г. Б. Галиев +6

    Article20112 citations
    ABI

  5. Submicron Gate-Fitted Superconducting Junction Using a Two-Dimensional Electron Gas

    Hideaki Takayanagi, Tatsushi Akazaki

    Article19952 citations
    ABI

  6. Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well

    Г. Б. Галиев, И. С. Васильевский, E. A. Klimov +4

    Article20152 citations
    ABI

  7. Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts

    Д. С. Пономарев, И. С. Васильевский, Г. Б. Галиев +4

    Article20122 citations
    ABI

  8. Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications

    J. Ajayan, D. Nirmal, P. Prajoon +1

    Article20172 citations
    ABI

  9. Enhanced room-temperature 3.5 µm photoluminescence in stress-balanced metamorphic In(Sb,As)/In(Ga,Al)As/GaAs quantum wells

    M. Yu. Chernov, Victor A. Solov’ev, O. S. Komkov +6

    Article20172 citations
    ABI

  10. Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

    S. V. Ivanov, M. Yu. Chernov, В. А. Соловьев +3

    Article20182 citations
    ABI

  11. Performance Analysis of InP based Composite Channel e-mode HEMT Device for High Frequency Applications

    Murali Krishna, M M Rahool, K. Dinesh Kumar +2

    Article20212 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

  14. Untitled

    Other1 citations
    ABI

  15. Untitled

    Other1 citations
    ABI

  16. Untitled

    Other1 citations
    ABI

  17. Electron eigenvalues in quantum well of AlAs/InxGa1−xAs/AlAs heterostructures with InAs nanoinserts

    Paziljon Baymatov, Bakhrom Abdulazizov, Makhmudjon Tokhirjonov

    ArticleSemiconductor Quantum Structures and DevicesThe European Physical Journal B20231 citations
    ABI