Calculation of lifetime and impurity photoconductivity in the development of photodetectors for the gas-discharge cell
Abstract
This paper presents the results of theoretical calculations of the stationary lifetime and stationary impurity photoconductivity, as well as the time of decline after switching off the light depending on the position of the Fermi level. It is shown that with increasing light intensity, the impurity photoconductivity increases in all regions of equilibrium concentration, and at very high light intensities, the impurity photoconductivity tends to a limiting value. The character of change of the stationary lifetime at high level of optical excitation was observed such that it decreases in the region of weak filling with increasing optical excitation intensity J. And also from the performed calculations, it appears that the relaxation time depends weakly on the light intensity.