Analysis of Kinetic Properties and Tunnel-Coupled States in Asymmetrical Multilayer Semiconductor Structures
Rustam Yavkachovich RasulovFergana State University, Fergana, UzbekistanVokhob R. RasulovFergana State University, Fergana, UzbekistanKamolakhon K. UrinovaKokand State pedagogical Institute, Kokand, UzbekistanIslombek A. MuminovFergana State University, Fergana, UzbekistanBahodir Bahromovich AkhmedovFergana State University, Fergana, Uzbekistan
ABI
Abstract
This study investigates the kinetic properties of both symmetrical and asymmetrical multilayer and nano-sized semiconductor structures. We develop a theoretical framework using various models and mathematical methods to solve the Schrödinger matrix equation for a system of electrons, taking into account the Bastard condition, which considers the difference in the effective masses of current carriers in adjacent layers. We analyze tunnel-coupled electronic states in quantum wells separated by a narrow tunnel-transparent potential barrier. Our findings provide insights into the electronic properties of semiconductor structures, which are crucial for applications in micro- or nanoelectronics and other areas of solid-state physics.
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