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Works cited by this work

43 works

Work: The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium

  1. Electronic irradiation of TlInSxSe2−x (x = 1): Morphology, structure and raman scattering

    M. Yu. Tashmetov, F. K. Khallokov, N.B. Ismatov +2

    ArticleSolid-state spectroscopy and crystallographyInternational Journal of Modern Physics B202113 citations
    ABI

  2. Structure, morphology and properties of ZnS crystal irradiated by electrons of different fluences

    M. Yu. Tashmetov, Bakhtiyar Madaminov, N.B. Ismatov +2

    ArticleQuantum Dots Synthesis And PropertiesInternational Journal of Modern Physics B20248 citations
    ABI

  3. Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

    Ye Shen, Xuan Fang, Xiang Ding +6

    Article20204 citations
    ABI

  4. The influence of electron beams to structure parameters of multi walled carbon nanotube

    I.I. Yuldashova, M. Yu. Tashmetov

    ArticleCarbon Nanotubes in CompositesPhysica B Condensed Matter20193 citations
    ABI

  5. Atomic Radii in Crystals

    J. C. Slater

    Article19643 citations
    ABI

  6. Oxidation of GaAs(110) with<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">NO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>: Infrared spectroscopy

    A. vom Felde, Klaus Kern, G. S. Higashi +4

    Article19903 citations
    ABI

  7. Atomic Screening Constants from SCF Functions. II. Atoms with 37 to 86 Electrons

    E. Clementi, D. L. Raimondi, William P. Reinhardt

    Article19673 citations
    ABI

  8. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium

    П. В. Середин, A. V. Fedyukin, I. N. Arsentyev +5

    Article20163 citations
    ABI

  9. Materials science and engineering: An introduction

    Clive R. Clayton

    Article19873 citations
    ABI

  10. Atomic and electron structure of the GaAs (001) surface

    S. E. Kulkova, С. В. Еремеев, A. V. Postnikov +2

    Article20072 citations
    ABI

  11. GaAs nanocrystals: Structure and vibrational properties

    Jhasaketan Nayak, S.N. Sahu, Satoshi Nozaki

    Article20052 citations
    ABI

  12. Microhardness profile in heteroepitaxial InAs/GaAs structures

    E. P. Trifonova, L. Hitova

    Article19932 citations
    ABI

  13. Effects of oxygen implantation in GaAs

    L. He, W.A. Anderson

    Article19932 citations
    ABI

  14. Porous layers on compensated GaAs:Cr

    A. S̆imkien≐, J. Sabataityt≐, V. Karpus +4

    Article20032 citations
    ABI

  15. Charge states and quantitative infrared spectroscopy of electrically active oxygen centers in gallium arsenide

    H. Ch. Alt, Y. V. Gomeniuk, U. Kretzer

    Article20072 citations
    ABI

  16. Infrared spectroscopy of amorphous hydrogenated GaAs: Evidence for H bridges

    Z. P. Wang, L. Ley, M. Cardona

    Article19822 citations
    ABI

  17. High-purity GaAs and Cr-doped GaAs epitaxial layers by MBE

    H. Morkoç, A. Y. Cho

    Article19792 citations
    ABI

  18. Assessment of oxygen in gallium arsenide by infrared local vibrational mode spectroscopy

    J. Schneider, B. Dischler, H. Seelewind +5

    Article19892 citations
    ABI

  19. Brinell and Vickers Hardness Measurement Using Image Processing and Analysis Techniques

    Pedro P. Rebouças Filho, Tarique da Silveira Cavalcante, Victor Hugo C. de Albuquerque +1

    Article20092 citations
    ABI

  20. Experimental evidence for a negative-<i>U</i>center in gallium arsenide related to oxygen

    H. Ch. Alt

    Article19902 citations
    ABI

  21. Characterization of Physical, Thermal and Structural Properties of Chromium (VI) Oxide Powder: Impact of Biofield Treatment

    Mahendra Kumar Trivedi

    Article20152 citations
    ABI

  22. Mikro- und Ultramikrohärteprüfung an GaAs-Einkristallen

    F. Bergner, Ute Bergmann, Michael Schäper +2

    Article20012 citations
    ABI

  23. Room temperature ferromagnetism in single-phase Zn1−x Mn x S diluted magnetic semiconductors fabricated by co-precipitation technique

    M. Hassan, Saima Younas, Falak Sher +3

    Article20172 citations
    ABI

  24. Measurement uncertainty of surface roughness measurement

    G Farkas, Ágota Drégelyi-Kiss

    Article20182 citations
    ABI

  25. Characterization of GaAs and GaAs/Cr/GaAs interfacial layers fabricated via magnetron sputtering on silicon (100)

    Laboratorio de Nanoestructuras Semiconductoras, Facultad de Ciencias Exactas y Naturales, Universidad Nacional de Colombia, Sede Manizales, Manizales 170004, Colombia, Camilo Pulzara-Mora, José Doria-Andrade +7

    Article20242 citations
    ABI