Article

The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium

M. Yu. TashmetovInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, Ulugbek District, 100214 Tashkent, UzbekistanAbror AbdaminovInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, Ulugbek District, 100214 Tashkent, UzbekistanKhabibulla DjangabaevKarakalpak State University named after Berdakh Ch. Abdirov St. 1, Nukus city, 230112 Republic of Karakalpakstan, UzbekistanО. П. ТолбановNational Research Tomsk State University, Russian Federation, Tomsk city, 634050 Lenina Avenue, 36N.B. IsmatovInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, Ulugbek District, 100214 Tashkent, Uzbekistan

Physica B Condensed Matterjournal2025en

ABI

Abstract

No abstract available.

Topics

Semiconductor Quantum Structures and Devices Semiconductor materials and interfaces GaN-based semiconductor devices and materials

Identifiers

DOI: 10.1016/j.physb.2025.417377

Citations and references

Cited by 4 43 references

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